Electronics

Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer

IS/ISO 9002 Lic# QSC/L- 000019.2

NPN SILICON PLANAR TRANSISTORS

CL speed of light, A, B CK 100, A, B TO-39 Metal Can Package

CL100 And CK 100 ar Medium Power Transistors Suitable For Awide Range Of Medium electromotive force And Current Amplifier Applications. Complementary CK100, A, B
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless stipulate otherwise) DESCRIPTION SYMBOL VCER accumulator register -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current-Continuous Power diarrhea @ Ta=25ºC Derate above 25ºC Total device dissipation @ Tc=25ºC Derate above 25ºC direct And Storage Junction Temperature Range VCBO VEBO ICM PD PD Tj, Tstg repute 50 60 5 1 800 5.



33 3 20 -55 to +175 UNITS V V V A mW mW /°C W mW /°C °C

ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter disruption Voltage BVCER * IC =10mA, IB =0 Collector Base disruption Voltage Emitter Base Breakdown Voltage Collector evasion Current Emitter Leakage Current DC Current wee Base Emitter On Voltage Collector Emitter (Sat) Voltage miscellany HFE BVCBO BVEBO ICBO IEBO hFE * IC =100µA, IE =0 IE=100µA, IC=0 VCB=40V, IE=0 VEB=4V, IE=0 IC=150mA,VCE=10V

MIN 50 60 5

TYP

MAX

UNIT V V V

50 1 40 300 0.9 0.6

nA µA V V

VBE(on)* VCE=1V, IC=150mA, VCE(sat)* IC=150mA,IB=15mA A 40-120 B 100-300

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